Formation of Al-doped ZnO films by de magnetron reactive sputtering

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	Formation of Al-doped ZnO films by de magnetron reactive sputtering
	M. Chen; Z. L. Pei; C. Sun; L. S. Wen; X. Wang
	2001
发表期刊	Materials Letters
ISSN	0167-577X
卷号	48 期号:3-4 页码:194-198
摘要	Highly preferred (002) orientation transparent conductive Al-doped ZnO (ZAO) films were successfully prepared by de magnetron reactive sputtering from a Zn target mixed with Al of 2.0 wt.%. The film has a resistivity of 4.80 X 10(-4) n cm and a visible transmittance of as high as 90%. XPS analysis indicates Al-enrichment on the film surface. The asymmetry of Al 2p(3/2) XPS peak is resolved into two components: one centering at 72.14 eV attributed to metallic Al and the other having a binding energy of 74.17 eV due to oxidized Al. (C) 2001 Elsevier Science B.V. All rights reserved.
部门归属	chinese acad sci, shanghai inst met, ion beam lab, shanghai 200050, peoples r china. chinese acad sci, inst met res, shenyang 110015, peoples r china.;chen, m (reprint author), chinese acad sci, shanghai inst met, ion beam lab, shanghai 200050, peoples r china
关键词	Al-doped Zno Xps Al-enrichment Oxide Thin-films Optical-properties Electrical-properties Rf Dc Transparent Deposition
URL	查看原文
WOS记录号	WOS:000168025100012
引用统计	被引频次：91[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36606
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. Chen,Z. L. Pei,C. Sun,et al. Formation of Al-doped ZnO films by de magnetron reactive sputtering[J]. Materials Letters,2001,48(3-4):194-198.
APA	M. Chen,Z. L. Pei,C. Sun,L. S. Wen,&X. Wang.(2001).Formation of Al-doped ZnO films by de magnetron reactive sputtering.Materials Letters,48(3-4),194-198.
MLA	M. Chen,et al."Formation of Al-doped ZnO films by de magnetron reactive sputtering".Materials Letters 48.3-4(2001):194-198.