Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure

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	Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure
	Y. Chen; G. Z. Ran; Y. K. Sun; Y. B. Wang; J. S. Fu; W. T. Chen; Y. Y. Gong; D. X. Wu; Z. C. Ma; W. H. Zong; G. G. Qin
	2001
发表期刊	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
ISSN	0168-583X
卷号	183 期号:3-4 页码:305-310
摘要	Si-rich SiO2 films were deposited on p-Si substrates using the magnetron sputtering technique and then implanted by Si, Ge or Ar ions. Electroluminescence (EL) was observed from the semitransparent Au film/ion-implanted Si-rich SiO2/p-Si diodes with the ion-implanted Si-rich SiO2/p-Si annealed at 1050 degreesC. In comparison with the A u/non-implanted Si-rich SiO2/p-Si diode, whose EL spectrum has a main peak at 1.8 eV and a shoulder at 2.4 eV, the Au/Si-implanted Si-rich SiO2/p-Si diode has an EL spectrum with the 1.8 and 2.4 eV peaks enhanced in intensity by factors of 2 and 8, respectively. Both EL spectra of Au/Ge-implanted Si-rich SiO2/p-Si diode Au/Ar-implanted Si-rich SiO2/p-Si diode have new strong peaks at 2.2 eV. The mechanisms for EL intensity enhancement and appearance of new EL peaks caused by ion-implantation are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
部门归属	beijing univ, dept phys, beijing 100871, peoples r china. chinese acad sci, microelect res & dev ctr, beijing 100029, peoples r china. hsri, natl key lab asic, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), beijing univ, dept phys, beijing 100871, peoples r china
关键词	Silicon-dioxide Films Visible Electroluminescence Optical-properties Photoluminescence Enhancement Sio2-films Glass
URL	查看原文
WOS记录号	WOS:000171341000017
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36610
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Chen,G. Z. Ran,Y. K. Sun,et al. Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2001,183(3-4):305-310.
APA	Y. Chen.,G. Z. Ran.,Y. K. Sun.,Y. B. Wang.,J. S. Fu.,...&G. G. Qin.(2001).Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,183(3-4),305-310.
MLA	Y. Chen,et al."Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 183.3-4(2001):305-310.