Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure

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	Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure; Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure
	C. L. Heng; Y. Chen; Z. C. Ma; W. H. Zong; G. G. Qin
	2001 ; 2001
发表期刊	Journal of Applied Physics ; Journal of Applied Physics
ISSN	0021-8979 ; 0021-8979
卷号	89 期号:10 页码:5682-5686
摘要	SiO2 layer/four-period amorphous-Si/SiO2 superlattices (ASSOSLs) with amorphous-Si layers having 12 thicknesses in a range of 1.0-3.2 nm were deposited on p-Si substrates using the two-target alternation magnetron sputtering technique. Electroluminescence (EL) from semitransparent Au film/SiO2/ASSOSL/p-Si diodes and from a control diode without any amorphous-Si layer in the ASSOSL has been observed when the applied forward bias exceeded about 5 V; under reverse biases, however, no EL was observed. Every EL spectrum of the Au/SiO2/ASSOSL/p-Si diodes along with the control one could be decomposed into two Gaussian bands with peak energies of 1.82 and 2.22 eV, and full widths at half maximums of 0.40 and 0.65 eV, respectively; and their intensities and the current swung synchronously with increasing Si layer thickness with a period length being consistent with half a De Broglie wavelength of the carriers. The experimental results indicated that the EL originates mainly from the radiative recombination of electron-hole pairs via two types of luminescence centers with luminescence energies of 1.82 and 2.22 eV in the SiO2 layers, rather than within the nanometer Si quantum wells in the ASSOSLs. (C) 2001 American Institute of Physics.; SiO2 layer/four-period amorphous-Si/SiO2 superlattices (ASSOSLs) with amorphous-Si layers having 12 thicknesses in a range of 1.0-3.2 nm were deposited on p-Si substrates using the two-target alternation magnetron sputtering technique. Electroluminescence (EL) from semitransparent Au film/SiO2/ASSOSL/p-Si diodes and from a control diode without any amorphous-Si layer in the ASSOSL has been observed when the applied forward bias exceeded about 5 V; under reverse biases, however, no EL was observed. Every EL spectrum of the Au/SiO2/ASSOSL/p-Si diodes along with the control one could be decomposed into two Gaussian bands with peak energies of 1.82 and 2.22 eV, and full widths at half maximums of 0.40 and 0.65 eV, respectively; and their intensities and the current swung synchronously with increasing Si layer thickness with a period length being consistent with half a De Broglie wavelength of the carriers. The experimental results indicated that the EL originates mainly from the radiative recombination of electron-hole pairs via two types of luminescence centers with luminescence energies of 1.82 and 2.22 eV in the SiO2 layers, rather than within the nanometer Si quantum wells in the ASSOSLs. (C) 2001 American Institute of Physics.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. hsri, asic, natl key lab, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china ; peking univ, dept phys, beijing 100871, peoples r china. hsri, asic, natl key lab, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Si/sio2 Superlattices Si/sio2 Superlattices Quantum Confinement Quantum Confinement Silicon Silicon Photoluminescence Photoluminescence
URL	查看原文 ; 查看原文
WOS记录号	WOS:000168438400074 ; WOS:000168438400074
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36668
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. L. Heng,Y. Chen,Z. C. Ma,et al. Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure, Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure[J]. Journal of Applied Physics, Journal of Applied Physics,2001, 2001,89, 89(10):5682-5686, 5682-5686.
APA	C. L. Heng,Y. Chen,Z. C. Ma,W. H. Zong,&G. G. Qin.(2001).Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure.Journal of Applied Physics,89(10),5682-5686.
MLA	C. L. Heng,et al."Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure".Journal of Applied Physics 89.10(2001):5682-5686.