Shear-activated indentation crack in GaAs single crystal

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	Shear-activated indentation crack in GaAs single crystal
	Z. C. Li; L. Liu; L. L. He; Y. B. Xu; X. Wu
	2001
发表期刊	Journal of Materials Research
ISSN	0884-2914
卷号	16 期号:10 页码:2845-2849
摘要	Cracks induced by 0.049N load indentation on the surface of gallium arsenide single crystal were investigated before and after annealing. The results revealed that the crack initiation essentially relates to the shear deformation during indentation. There were dislocation generation, lattice distortion, and the transformation from crystalline to disordered structure, leading, to the occurrence of an amorphous band in front of the crack tip. After being annealed at 500 degreesC for 60 min, the amorphous band disappeared, and instead, recrystallized grains appeared along the crack-propagation direction. It is reasonable to propose that crack propagation is the result of the decohesion of the amorphous band rather than the direct debonding along a certain atomic plane.
部门归属	chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. wayne state univ, dept mech & engn, detroit, mi 48202 usa.;li, zc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;zhchli@imr.ac.cn
关键词	Electron-microscopy Ductile Transition Silicon Fracture Tips
URL	查看原文
WOS记录号	WOS:000171429600018
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36710
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. C. Li,L. Liu,L. L. He,et al. Shear-activated indentation crack in GaAs single crystal[J]. Journal of Materials Research,2001,16(10):2845-2849.
APA	Z. C. Li,L. Liu,L. L. He,Y. B. Xu,&X. Wu.(2001).Shear-activated indentation crack in GaAs single crystal.Journal of Materials Research,16(10),2845-2849.
MLA	Z. C. Li,et al."Shear-activated indentation crack in GaAs single crystal".Journal of Materials Research 16.10(2001):2845-2849.