Influence of silicon on the oxidation behaviour of orthorhombic titanium aluminide alloys

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	Influence of silicon on the oxidation behaviour of orthorhombic titanium aluminide alloys
	B. Lu; M. S. Li; Y. Y. Cui; R. Yang; F. H. Wang
	2001
发表期刊	International Journal of Materials & Product Technology
ISSN	0268-1900
页码	829-834
摘要	Ti3Al-Nb based intermetallic alloys in both monolithic and composite form have potential applications in aircraft engine components. In this work, the isothermal and cyclic oxidation behaviours of a base alloy, Ti-24Al-14Nb-3V-0.5Mo (at. pct), with Si additions ranging from 0.3 to 0.9 (at. pct) have been studied over the temperature range of 650degreesC to 800degreesC. The excellent oxidation resistance obtained in the Si continuing alloys is attributable to the formation of TiO2+Al2O3 scale which is denser than that for alloys without Si. The mechanism of the improvements due to Si is discussed. For comparison, the oxidation resistance of an orthorhombic titanium aluminide alloy with higher contents of Nb, Ti-22Al-26Nb, was also studied. The cyclic oxidation experiment of the alloy indicated that the maximum oxidation resistance is achieved in the orthorhombic alloys with an intermediate level of Nb.
部门归属	chinese acad sci, inst met res, shenyang 110015, peoples r china.
关键词	Oxidation Si Addition Orthorhombic Titanium Aluminide Alloy Niobium
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WOS记录号	WOS:000174604900065
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36734
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	B. Lu,M. S. Li,Y. Y. Cui,et al. Influence of silicon on the oxidation behaviour of orthorhombic titanium aluminide alloys[J]. International Journal of Materials & Product Technology,2001:829-834.
APA	B. Lu,M. S. Li,Y. Y. Cui,R. Yang,&F. H. Wang.(2001).Influence of silicon on the oxidation behaviour of orthorhombic titanium aluminide alloys.International Journal of Materials & Product Technology,829-834.
MLA	B. Lu,et al."Influence of silicon on the oxidation behaviour of orthorhombic titanium aluminide alloys".International Journal of Materials & Product Technology (2001):829-834.