Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering | |
Z. L. Pei; C. Sun; M. H. Tan; D. H. Guan; J. Q. Xiao; R. F. Huang; L. H. Wen | |
2001 | |
发表期刊 | Progress in Natural Science
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ISSN | 1002-0071 |
卷号 | 11期号:6页码:439-446 |
摘要 | The high quality ZnO:Al films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen now and Al-doping concentration during deposition of ZnO:AI films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:Al semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size las compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( similar to 5 x 10(-4) Omega cm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively. |
部门归属 | acad sinica, inst met res, shenyang 110015, peoples r china.;sun, c (reprint author), acad sinica, inst met res, shenyang 110015, peoples r china |
关键词 | Zno : Al Films Scattering Mechanism Photoelectric Properties Oxide Thin-films Conduction Mechanism Transparent Sensors |
URL | 查看原文 |
WOS记录号 | WOS:000168925600006 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/36775 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Z. L. Pei,C. Sun,M. H. Tan,et al. Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering[J]. Progress in Natural Science,2001,11(6):439-446. |
APA | Z. L. Pei.,C. Sun.,M. H. Tan.,D. H. Guan.,J. Q. Xiao.,...&L. H. Wen.(2001).Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering.Progress in Natural Science,11(6),439-446. |
MLA | Z. L. Pei,et al."Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering".Progress in Natural Science 11.6(2001):439-446. |
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