Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering

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	Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering
	G. Z. Ran; Y. Chen; Z. C. Ma; W. H. Zong; L. Q. Xie; C. G. Guo; G. C. Qin
	2001
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	18 期号:7 页码:986-988
摘要	Room-temperature 1.54 mum photoluminescence (PL) is observed from Er-doped Si-rich SiO2 (SiO2:Si:Er) films deposited by using the magnetron sputtering technique. To determine the optimum Si content in the SiO2:Si:Er films, the percentage area of the Si target in the composite SiO2-Si-Er target was changed from 0, to 10%, 20% and 30%. The percentage area of the Er target was fixed at 1%. It is found that the optimum annealing temperatures for Er3+ luminescence intensities are 900 degreesC for the SiO2:Er film and 900, 800 and 700 degreesC for the SiO2:Si:Er films containing 10%, 20% and 30% excess-Si (percentage areas of Si target), respectively The SiO2:Si:Er film containing 20% excess-Si and annealed at 800 degrees C has the most intense FL.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. hebei semicond res inst, asic, natl key lab, shijiazhuang 050051, peoples r china. beijing normal univ, key lab, univ radiat beam technol & mat modificat, beijing 100875, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;ran, gz (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Silicon-oxide Electroluminescence Nanocrystals Sio2-films Luminescence
URL	查看原文
WOS记录号	WOS:000170056200047
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36782
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,Y. Chen,Z. C. Ma,et al. Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering[J]. Chinese Physics Letters,2001,18(7):986-988.
APA	G. Z. Ran.,Y. Chen.,Z. C. Ma.,W. H. Zong.,L. Q. Xie.,...&G. C. Qin.(2001).Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering.Chinese Physics Letters,18(7),986-988.
MLA	G. Z. Ran,et al."Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering".Chinese Physics Letters 18.7(2001):986-988.