| Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering | |
| G. Z. Ran; Y. Chen; W. C. Qin; J. S. Fu; Z. C. Ma; W. H. Zong; H. Lu; J. Qin; G. G. Qin | |
| 2001 | |
| Source Publication | Journal of Applied Physics
 |
| ISSN | 0021-8979 |
| Volume | 90Issue:11Pages:5835-5837 |
| Abstract | Room-temperature 1.54 mum electroluminescence (EL) was compared for Au/SiO2:Er/n(+)-Si and Au/SiOx:Si:Er/n(+)-Si diodes under reverse bias. The 18 nm thick SiO2:Er and SiOx:Si:Er films were deposited by the magnetron sputtering technique. The maximum of the EL intensity was reached after annealing at 900 degreesC (SiO2:Er) and 800 degreesC (SiOx:Si:Er). The threshold potential of the EL was about 4 and 6 V for the Au/SiOx:Si:Er/n(+)-Si and Au/SiO2:Er/n(+)-Si diodes, respectively. The power efficiency was larger for the Au/SiOx:Si:Er/n(+)-Si diode than that for the Au/SiO2:Er/n(+)-Si diode by six times. Our experimental results demonstrate that the existence of Si nanoclusters reduces the threshold potentials of the EL and strongly enhances the power efficiency for Er3+ EL. (C) 2001 American Institute of Physics. |
| description.department | peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. hsri, natl key lab asic, beijing 050051, peoples r china. chinese acad sci, inst phys, beijing 100080, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china |
| Keyword | Molecular-beam Epitaxy Erbium Si Photoluminescence Diodes |
| URL | 查看原文 |
| WOS ID | WOS:000172129200062 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/36783 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | G. Z. Ran,Y. Chen,W. C. Qin,et al. Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering[J]. Journal of Applied Physics,2001,90(11):5835-5837. |
| APA | G. Z. Ran.,Y. Chen.,W. C. Qin.,J. S. Fu.,Z. C. Ma.,...&G. G. Qin.(2001).Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering.Journal of Applied Physics,90(11),5835-5837. |
| MLA | G. Z. Ran,et al."Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering".Journal of Applied Physics 90.11(2001):5835-5837. |
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