An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films

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	An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films
	G. Z. Ran; Y. Chen; F. C. Yuan; Y. P. Qiao; J. S. Fu; Z. C. Ma; W. H. Zong; G. G. Qin
	2001
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	118 期号:11 页码:599-602
摘要	Er-doped Si-rich SiO2 (SRSO:Er) films have been deposited on n(+)-Si substrates by the magnetron sputtering technique, and both photoluminescence (PL) and electroluminescence (EL) at 1.54 mum have been observed from the films at room temperature. Dependence of pi, and EL intensities on the excess-Si content and annealing temperature has been studied. It is found that proper Si content and annealing temperature can evidently enhance EL intensity. An SRSO:Er film with 20% excess Si (area ratio of the Si target to the whole target) had more intense EL than a SiO2:Er film without excess Si, both annealed at 800 degreesC, by a factor of 5. This fact clearly demonstrates that energy coupling between Si nanometer particles and Er3+ ions also exists in the EL process as well as in the PL process. Experimental results also indicate that crystallization is not a prerequisite for NSPs enhancing luminescence in SRSO:Er films. The PL and EL spectra of the SRSO:Er films have much broader full widths at half maximum (FWHM, similar to 60 nm) than those of the other Er-doped materials reported. This wide FWHM can perhaps be used in wavelength division multiplexing in optical communication in future. (C) 2001 Elsevier Science Ltd. All rights reserved.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. hsri, asic, natl key lab, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Thin Films Nanostructures Recombination And Trapping Luminescence Molecular-beam Epitaxy Oxygen-doped Silicon Erbium Nanocrystals Light Oxide
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WOS记录号	WOS:000169218000011
引用统计	被引频次：27[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36784
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,Y. Chen,F. C. Yuan,et al. An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films[J]. Solid State Communications,2001,118(11):599-602.
APA	G. Z. Ran.,Y. Chen.,F. C. Yuan.,Y. P. Qiao.,J. S. Fu.,...&G. G. Qin.(2001).An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films.Solid State Communications,118(11),599-602.
MLA	G. Z. Ran,et al."An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films".Solid State Communications 118.11(2001):599-602.