4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures

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	4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures
	G. Z. Ran; W. C. Qin; Z. C. Ma; W. H. Zong; G. G. Qin
	2001
发表期刊	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
ISSN	0168-583X
卷号	173 期号:3 页码:299-303
摘要	The effects of 3 MeV electron irradiation on electroluminescence (EL) from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures are reported. The SiO2 and Si-rich SiO2 films were deposited on p-Si wafers using the magnetron sputtering technique and then processed by rapid thermal annealing (RTA) at a series of temperatures. The Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures were irradiated by electrons with an energy of 4 Mev and a dose rate of 8.5 x 10(12) cm(-2) s(-1) EL intensities of the two structures as functions of the RTA temperature and electron irradiation time have been studied. For the Au/SiO2/p-Si structure with SiO2/p-Si annealed at 900 degreesC, the EL intensity increased to a maximum in electron irradiation for 20 s, which is larger than that before irradiation by a factor of 3. These experimental results have been discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
部门归属	beijing univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. hsri, natl key lab asic, shijiazhuang 050051, peoples r china.;qin, gg (reprint author), beijing univ, dept phys, beijing 100871, peoples r china
关键词	Porous Silicon Visible Electroluminescence Quantum Efficiency Si Structure P-si Oxide Photoluminescence Films
URL	查看原文
WOS记录号	WOS:000166324900006
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36785
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,W. C. Qin,Z. C. Ma,et al. 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2001,173(3):299-303.
APA	G. Z. Ran,W. C. Qin,Z. C. Ma,W. H. Zong,&G. G. Qin.(2001).4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,173(3),299-303.
MLA	G. Z. Ran,et al."4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 173.3(2001):299-303.