Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation

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	Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation
	G. Z. Ran; S. T. Wang; J. S. Fu; Z. C. Ma; W. H. Zong; G. G. Qin
	2001
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	93 期号:1 页码:75-80
摘要	Doping Al into the nanoscale Si-rich SiO2 (NSS) films subsequently annealed at temperatures lower than similar to 700 degreesC made the EL intensity of Au/NSS/p-Si samples increase by a factor of 4-6, but did not change its EL peak wavelength. Doping Al into NSS films subsequently annealed at temperatures higher than similar to 700 degreesC made the EL intensities of Au/NSS/p-Si samples increase by a factor larger than 6 and the EL peaks redshift evidently, gamma -ray irradiation has very similar effects in increasing and redshifting the EL spectra of Au/NSS/p-Si. The currents of Au/NSS/p-Si samples with NSS/p-Si annealed at various temperatures under a definite forward bias were invariant or increased in the gamma ray irradiation process. However, the currents of Au/NSS:Al/p-Si samples with NSS:Al/p-Si annealed at temperatures smaller than similar to 700 degreesC under the same definite forward bias decreased in the gamma -ray irradiation process. The experimental facts can be interpreted qualitatively if the main origin of EL is attributed to defects and/or impurities in the NSS films. (C) 2001 Elsevier Science B.V. All rights reserved.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. hsri, natl key lab asic, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Electroluminescence Luminescence Center Nanocrystalline Irradiation Doping Porous Silicon Visible Electroluminescence P-si Stability
URL	查看原文
WOS记录号	WOS:000168329000007
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36786
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,S. T. Wang,J. S. Fu,et al. Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation[J]. Journal of Luminescence,2001,93(1):75-80.
APA	G. Z. Ran,S. T. Wang,J. S. Fu,Z. C. Ma,W. H. Zong,&G. G. Qin.(2001).Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation.Journal of Luminescence,93(1),75-80.
MLA	G. Z. Ran,et al."Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation".Journal of Luminescence 93.1(2001):75-80.