Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films

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	Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films
	G. H. Song; C. Sun; B. Wang; A. Y. Wang; R. F. Huang; L. S. Wen
	2001
发表期刊	Materials Letters
ISSN	0167-577X
卷号	48 期号:1 页码:41135
摘要	In this paper, the nucleation of diamond films was studied with the varied bias value and mass current density by adjusting the gas flow rate through the chamber. Results showed that the two parameters above greatly influenced the nucleation density and the morphology of diamond films. Both bias value and mass current density had an optimum value in which the nucleation density reached the maximum. The nucleation of diamond films by hot filament chemical vapor deposition (HFCVD) is a competitive process of deposition and etches (sputtered) due to particle impact on the substrate. The magnitude of the particle energy in gas plasma and mass current density of gas controlled the competitive process and determined whose process was primary. The deposition process was gradually strengthened and the nucleation density increased due to the increment of the energy and quantity of the adatoms and reached a maximum at optimization with the increment of the two parameters mentioned above. The deposition process is suppressed by strengthened particle impact on substrate and the etch (sputtered) process was primary with the further increment of the two parameters above. (C) 2001 Elsevier Science B.V. All rights reserved.
部门归属	chinese acad sci, inst met res, shenyang 110015, peoples r china. shenyang polytech univ, dept mat engn, shenyang 110023, peoples r china.;wen, ls (reprint author), chinese acad sci, inst met res, 72 wenhua rd, shenyang 110015, peoples r china
关键词	Diamond Film Hot Filament Chemical Vapor Deposition (Hfcvd) Nucleation Density Mass Current Density Substrate Bias Chemical-vapor-deposition Amorphous-carbon Initial Growth Flow Rate Mechanism
URL	查看原文
WOS记录号	WOS:000167386500002
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36802
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. H. Song,C. Sun,B. Wang,et al. Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films[J]. Materials Letters,2001,48(1):41135.
APA	G. H. Song,C. Sun,B. Wang,A. Y. Wang,R. F. Huang,&L. S. Wen.(2001).Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films.Materials Letters,48(1),41135.
MLA	G. H. Song,et al."Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films".Materials Letters 48.1(2001):41135.