| The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots | |
| S. H. Wang; G. Y. Qin; S. F. Ren; G. G. Qin | |
| 2001 | |
| Source Publication | Communications in Theoretical Physics
 |
| ISSN | 0253-6102 |
| Volume | 35Issue:3Pages:371-380 |
| Abstract | Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the SiOinfinity layers surrounding the nc-Si, the relationship between the photoluminescence (PL) and the thickness of the SiOinfinity layer is studied with the excitation energy flux density as a parameter. When there is no SiOinfinity layer surrounding the nc-Si, the electron-heavy hole pair can only recombine inside the nc-Si, then the PL blueshift with reducing particle sizes roughly accords with the rule predicted by the quantum confinement model of Canham. When there presences a SiOinfinity layer, some of the carriers may tunnel into it and recombine outside the nc-Si at the LCs to emit visible light. The thicker the SiOinfinity layer is, the higher the radiative recombination rate occurred outside the nc-Si will be. When the central scale of the nc-Si is much smaller than the critical scale, the radiative recombination rate outside the nc-Si dominates, and visible PL will be possible for some nc-Si samples with big average radius, greater than 4 nm, for example. When there is only one kind of LC in, the SiOinfinity layer, the PL peak position does not shift with reducing particle sizes. All these conclusions are in accord with the experimental results. When there are two or more kinds of LCs in the SiOinfinity layer, the PL peak position energy and intensity swing with reducing particle sizes. |
| description.department | nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. nanjing univ, dept phys, nanjing 210093, peoples r china. nanjing inst chem technol, nanjing 210009, peoples r china. illinois state univ, dept phys, normal, il 61790 usa. peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gy (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china |
| Keyword | Silicon Oxide Layer Quantum Dot Luminescence Porous Silicon Si Nanocrystals Photoluminescence Mechanism States Electroluminescence Sio2-films Films Dlts |
| URL | 查看原文 |
| WOS ID | WOS:000168437400021 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/36829 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | S. H. Wang,G. Y. Qin,S. F. Ren,et al. The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots[J]. Communications in Theoretical Physics,2001,35(3):371-380. |
| APA | S. H. Wang,G. Y. Qin,S. F. Ren,&G. G. Qin.(2001).The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots.Communications in Theoretical Physics,35(3),371-380. |
| MLA | S. H. Wang,et al."The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots".Communications in Theoretical Physics 35.3(2001):371-380. |
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