An accurate four-line ac electrical resistance measurement (ERM) apparatus was developed. By using the ERM the crystallization kinetics of amorphous NI80P20, FeZr2, Fe86B14 alloys were investigated. The experimental results show that the ERM can identify the early stage of crystallization in amorphous alloys. The ERM detects a crystallization temperature range obviously wider than the DSC does, indicating that the ERM is more sensitive to the structure evolution in crystallization. For the eutectic or polymorphic crystallization, three distinct processes can be identified from the measured resistance variation: (i) crystal nucleation, (ii) subsequent growth of crystal nuclei, and (iii) coarsening of the crystallites. In the early stage of the primary crystallization, the ERM results reflect the nucleation information as well.
部门归属
acad sinica, inst met res, state key lab rsa, shenyang 110015, peoples r china.;lu, k (reprint author), acad sinica, inst met res, state key lab rsa, shenyang 110015, peoples r china
Y. P. Wang,K. Lu. Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys[J]. Science in China Series E-Technological Sciences,2001,44(1):33-41.
APA
Y. P. Wang,&K. Lu.(2001).Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys.Science in China Series E-Technological Sciences,44(1),33-41.
MLA
Y. P. Wang,et al."Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys".Science in China Series E-Technological Sciences 44.1(2001):33-41.
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