The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process

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	The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process
	J. G. Zhu; C. Yu; D. Q. Xiao; L. Shen; X. W. Yuan; J. L. Zhu; X. Yue
	2001
发表期刊	Ferroelectrics
ISSN	0015-0193
卷号	260 期号:1-4 页码:499-504
摘要	Lanthanum doped bismuth titanate (Bi(3.5)La(0.5)Ti(3)O(12), BLT-5) thin films were prepared by sol-gel method. Polycrystalline BLT-5 thin films could be obtained at annealing temperatures of 600similar to650 degreesC. The typical coercive electric field (E) and remnant polarization (P,) for the BLT-5 thin film annealed at 650degreesC were E(C)=67 kV/cm, P(r) =11.2 mu C/cm(2), respectively. BLT-5 thin film shows good fatigue-free property.
部门归属	sichuan univ, dept mat sci, chengdu 610064, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;zhu, jg (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china
关键词	Bismuth Titanate Lanthanum Doped Sol-gel Memories Srbi2ta2o9
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36965
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. G. Zhu,C. Yu,D. Q. Xiao,et al. The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process[J]. Ferroelectrics,2001,260(1-4):499-504.
APA	J. G. Zhu.,C. Yu.,D. Q. Xiao.,L. Shen.,X. W. Yuan.,...&X. Yue.(2001).The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process.Ferroelectrics,260(1-4),499-504.
MLA	J. G. Zhu,et al."The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process".Ferroelectrics 260.1-4(2001):499-504.