Computer simulation of reactive sputtering

IMR OpenIR

	Computer simulation of reactive sputtering
	S. L. Zhu; F. H. Wang; W. T. Wu; L. Xin; C. S. Hu; S. L. Yang; S. J. Geng; M. S. Li; Y. M. Xiong; K. W. Chen
	2001
发表期刊	International Journal of Materials & Product Technology
ISSN	0268-1900
页码	101-106
摘要	Computer simulations of direct current reactive sputtering based on a kinetics model were carried out in this article. It was revealed that, reactive sputtering exhibited steady state transition-free and hysteresis-free behavior, only when the sputtering yield of compound was approximately that of the corresponding metal. By changing the configuration of the sputter system (discharge current, target area, pumping rate), it was possible to get a hysteresis-free reactive sputtering behavior. However, it was too difficult to eliminate the steady states transition by this method. The much lower value of the sputtering yield, as compared with that of the corresponding metal, might be the most important cause of the steady state transition and hysteresis effect.
部门归属	chinese acad sci, inst met res, state key lab corros & protect, shenyang 110015, peoples r china. fushun petr inst, fushun 113001, peoples r china.
关键词	Reactive Sputtering Computer Simulation Kinetics Modeling Films Deposition
URL	查看原文
WOS记录号	WOS:000174288300015
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36966
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. L. Zhu,F. H. Wang,W. T. Wu,et al. Computer simulation of reactive sputtering[J]. International Journal of Materials & Product Technology,2001:101-106.
APA	S. L. Zhu.,F. H. Wang.,W. T. Wu.,L. Xin.,C. S. Hu.,...&K. W. Chen.(2001).Computer simulation of reactive sputtering.International Journal of Materials & Product Technology,101-106.
MLA	S. L. Zhu,et al."Computer simulation of reactive sputtering".International Journal of Materials & Product Technology (2001):101-106.