Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias

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	Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias
	C. L. Heng; Y. K. Sun; S. T. Wang; Y. Chen; Y. P. Qiao; B. R. Zhang; Z. C. Ma; W. H. Zong; G. G. Qin
	2000
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	77 期号:10 页码:1416-1418
摘要	Nanometer SiO2/nanometer Si/nanometer SiO2 double-barrier (DB) structures, with Si layers having eleven different thicknesses from 2 to 4 nm, were deposited on n(+)-Si substrates using the magnetron sputtering technique. Strong electroluminescence (EL) from semitransparent Au film/DB/n(+)-Si structure was observed under reverse bias in a range of about 5-7 V. It is found that every EL spectrum of the structure can be decomposed into two Gaussian bands with peaks at around 1.85 and 2.25 eV, and their intensities and current swing synchronously with increasing nanometer Si layer thickness; the periodic length of swing is consistent with half of the de Broglie wavelength of the carriers. A comparison was carried out between EL from the Au/DB/n(+)-Si structure under reverse bias and that from the Au/DB/p-Si structure under forward bias reported previously. (C) 2000 American Institute of Physics. [S0003-6951(00)01736-8].
部门归属	peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. hsri, natl key lab asic, shijiazhuang 0500501, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Porous Silicon Visible Electroluminescence P-si Band
URL	查看原文
WOS记录号	WOS:000089017200002
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37046
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. L. Heng,Y. K. Sun,S. T. Wang,et al. Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias[J]. Applied Physics Letters,2000,77(10):1416-1418.
APA	C. L. Heng.,Y. K. Sun.,S. T. Wang.,Y. Chen.,Y. P. Qiao.,...&G. G. Qin.(2000).Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias.Applied Physics Letters,77(10),1416-1418.
MLA	C. L. Heng,et al."Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias".Applied Physics Letters 77.10(2000):1416-1418.