Polarized Raman study of single-wall semiconducting carbon nanotubes

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	Polarized Raman study of single-wall semiconducting carbon nanotubes; Polarized Raman study of single-wall semiconducting carbon nanotubes
	A. Jorio; G. Dresselhaus; M. S. Dresselhaus; M. Souza; M. S. S. Dantas; M. A. Pimenta; A. M. Rao; R. Saito; C. Liu; H. M. Cheng
	2000 ; 2000
发表期刊	Physical Review Letters ; Physical Review Letters
ISSN	0031-9007 ; 0031-9007
卷号	85 期号:12 页码:2617-2620
摘要	Polarized Raman spectra were obtained from a rope of aligned semiconducting single-wall nanotubes (SWNTs) in the vicinity of the D band and the G band. Based on group theory analysis and related theoretical predictions, the G-band profile was deconvolved into four intrinsic SWNT components with the following symmetry assignments: 1549 cm(-1) [E-2(E-2g)], 1567 cm(-1) [A(A(1g)) + E-1(E-1g)], 1590 cm(-1) [A(A(1g)) + E-1(E-1g)] and 1607 cm(-1) [E-2(E-2g)]. The frequency shifts of the tangential G modes from the 2D graphitelike E-2g2 frequency are discussed in terms of the nanotube geometry.; Polarized Raman spectra were obtained from a rope of aligned semiconducting single-wall nanotubes (SWNTs) in the vicinity of the D band and the G band. Based on group theory analysis and related theoretical predictions, the G-band profile was deconvolved into four intrinsic SWNT components with the following symmetry assignments: 1549 cm(-1) [E-2(E-2g)], 1567 cm(-1) [A(A(1g)) + E-1(E-1g)], 1590 cm(-1) [A(A(1g)) + E-1(E-1g)] and 1607 cm(-1) [E-2(E-2g)]. The frequency shifts of the tangential G modes from the 2D graphitelike E-2g2 frequency are discussed in terms of the nanotube geometry.
部门归属	mit, cambridge, ma 02139 usa. univ fed minas gerais, dept fis, br-30123970 belo horizonte, mg, brazil. univ kentucky, dept phys & astron, ctr appl energy res, lexington, ky 40506 usa. univ electrocommun, dept elect engn, tokyo 1828585, japan. chinese acad sci, inst met res, shenyang 110015, peoples r china.;rao, am (reprint author), mit, 77 massachusetts ave, cambridge, ma 02139 usa ; mit, cambridge, ma 02139 usa. univ fed minas gerais, dept fis, br-30123970 belo horizonte, mg, brazil. univ kentucky, dept phys & astron, ctr appl energy res, lexington, ky 40506 usa. univ electrocommun, dept elect engn, tokyo 1828585, japan. chinese acad sci, inst met res, shenyang 110015, peoples r china.;rao, am (reprint author), mit, 77 massachusetts ave, cambridge, ma 02139 usa
关键词	Vibrational-modes Vibrational-modes Scattering Scattering
URL	查看原文 ; 查看原文
WOS记录号	WOS:000089392500052 ; WOS:000089392500052
引用统计	被引频次：216[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37071
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	A. Jorio,G. Dresselhaus,M. S. Dresselhaus,et al. Polarized Raman study of single-wall semiconducting carbon nanotubes, Polarized Raman study of single-wall semiconducting carbon nanotubes[J]. Physical Review Letters, Physical Review Letters,2000, 2000,85, 85(12):2617-2620, 2617-2620.
APA	A. Jorio.,G. Dresselhaus.,M. S. Dresselhaus.,M. Souza.,M. S. S. Dantas.,...&H. M. Cheng.(2000).Polarized Raman study of single-wall semiconducting carbon nanotubes.Physical Review Letters,85(12),2617-2620.
MLA	A. Jorio,et al."Polarized Raman study of single-wall semiconducting carbon nanotubes".Physical Review Letters 85.12(2000):2617-2620.