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Plan-view imaging of oxygen-induced reconstruction on Ag(110) surface. II. Effect of high-energy electron thinning
S. Y. Li; J. Zhu; H. Q. Ye
2000
发表期刊Journal of Electron Microscopy
ISSN0022-0744
卷号49期号:1页码:173-177
摘要The feasibility and the limitation of the 'high-energy electron thinning' method for the production of surface-science-grade samples in situ in the electron microscope are studied. Exploiting the electron beam supplied by high-voltage electron gun in electron microscope, this method can be readily realized. An obvious advantage of this method is that we can monitor the sample surface concurrently. However, this sample preparation method depends strongly on the sample material and the local environment within the electron microscope. Factors relating to the electron thinning speed are briefly discussed.
部门归属tsing hua univ, dept mat sci & engn, sch mat sci & engn, electron microscopy lab, beijing 100084, peoples r china. chinese acad sci, inst met res, atom imaging solids lab, shenyang 110015, peoples r china.;zhu, j (reprint author), tsing hua univ, dept mat sci & engn, sch mat sci & engn, electron microscopy lab, beijing 100084, peoples r china
关键词Transmission Electron Microscopy Plan-view Imaging Of Surfaces Sample Preparation Electron-solid Interaction Au(001) Surface Uhv Microscopy Si(111)-7x7 Diffraction Cu(110) Film
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WOS记录号WOS:000086028100021
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37092
专题中国科学院金属研究所
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S. Y. Li,J. Zhu,H. Q. Ye. Plan-view imaging of oxygen-induced reconstruction on Ag(110) surface. II. Effect of high-energy electron thinning[J]. Journal of Electron Microscopy,2000,49(1):173-177.
APA S. Y. Li,J. Zhu,&H. Q. Ye.(2000).Plan-view imaging of oxygen-induced reconstruction on Ag(110) surface. II. Effect of high-energy electron thinning.Journal of Electron Microscopy,49(1),173-177.
MLA S. Y. Li,et al."Plan-view imaging of oxygen-induced reconstruction on Ag(110) surface. II. Effect of high-energy electron thinning".Journal of Electron Microscopy 49.1(2000):173-177.
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