| Multiple mechanism model for photoluminescence from oxidized porous Si |
| G. G. Qin; G. Qin
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| 2000
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| 发表期刊 | Physica Status Solidi a-Applied Research
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| ISSN | 0031-8965
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| 卷号 | 182期号:1页码:335-339 |
| 摘要 | In order to explain experimental results for photoluminescence (PL) from porous silicon (PS), a novel multiple mechanism model is suggested. There are three types of competitive photoexcitation-photoemission processes in PS; and which of them dominates, is usually determined by the oxidation degree of the PS. For a PS sample free from oxidation, the process that both photoexcitation and photoemission of electron-hole pails occur within nanometer silicon particles (NSPs) is dominating. For most oxidized PS samples, the process with the photoexcitation occuring in NSPs, but photoemission occuring in luminescence centers in the SiOx layers surrounding the NSPs, dominates. When NSPs in oxidized PS samples have very small density or very small or large sizes, the process that both photoexcitation and photoemission occur in Si oxide layers is dominating. |
| 部门归属 | beijing univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. nanjing univ, dept phys, nanjing 210008, peoples r china.;qin, gg (reprint author), beijing univ, dept phys, beijing 100871, peoples r china
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| 关键词 | Silicon
Luminescence
States
Layers
Oxygen
Dlts
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| URL | 查看原文
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| WOS记录号 | WOS:000165756500054
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/37153
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| 专题 | 中国科学院金属研究所
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推荐引用方式
GB/T 7714 |
G. G. Qin,G. Qin. Multiple mechanism model for photoluminescence from oxidized porous Si[J]. Physica Status Solidi a-Applied Research,2000,182(1):335-339.
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| APA |
G. G. Qin,&G. Qin.(2000).Multiple mechanism model for photoluminescence from oxidized porous Si.Physica Status Solidi a-Applied Research,182(1),335-339.
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| MLA |
G. G. Qin,et al."Multiple mechanism model for photoluminescence from oxidized porous Si".Physica Status Solidi a-Applied Research 182.1(2000):335-339.
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