| Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films | |
| L. P. You; C. L. Heng; S. Y. Ma; Z. C. Ma; W. H. Zong; Z. L. Wu; G. G. Win | |
| 2000 | |
| Source Publication | Journal of Crystal Growth
 |
| ISSN | 0022-0248 |
| Volume | 212Issue:1-2Pages:109-114 |
| Abstract | Si-rich SiO2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO2 composite targets. X-ray photoelectron spectroscopy measurements indicate that Si clusters were present in the as-deposited films. The precipitation and crystallization of nanometer Si clusters in SiO2 films annealed at high temperatures have been studied using high-resolution transmission electron microscopy and electron diffraction. Si nanocrystallites were observed in the sample deposited using a Si-SiO2 composite target having a 30% area of Si and which had been annealed at 900 degrees C. The average size and density of Si nanocrystallites in the films increased notably as the annealing temperature was increased from 900 to 1100 degrees C, Thus, using a 1100 degrees C anneal and increasing the area percentage of Si in the composite target from 20 to 30%, the average size of Si nanocrystallites increased about 15%, and the density of Si nanocrystallites increased by a factor of about 2.5. (C) 2000 Elsevier Science B.V. All rights reserved. |
| description.department | peking univ, dept phys, beijing 100871, peoples r china. 13th inst minist elect ind, natl lab gaas ic, shijiazhuang 050051, peoples r china. beijing normal univ, anal & testing ctr, beijing 100875, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;win, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china |
| Keyword | Si-rich Sio2 Si Nanocrystallites High-resolution Transmission Electron Microscopy Visible Luminescence Optical-properties Ion-implantation Photoluminescence Nanocrystals Sio2-films Confinement |
| URL | 查看原文 |
| WOS ID | WOS:000086678100016 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/37229 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | L. P. You,C. L. Heng,S. Y. Ma,et al. Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films[J]. Journal of Crystal Growth,2000,212(1-2):109-114. |
| APA | L. P. You.,C. L. Heng.,S. Y. Ma.,Z. C. Ma.,W. H. Zong.,...&G. G. Win.(2000).Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films.Journal of Crystal Growth,212(1-2),109-114. |
| MLA | L. P. You,et al."Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films".Journal of Crystal Growth 212.1-2(2000):109-114. |
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