Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal

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	Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal; Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal
	Z. F. Zhang; Z. G. Wang; S. X. Li
	2000 ; 2000
发表期刊	Philosophical Magazine Letters ; Philosophical Magazine Letters
ISSN	0950-0839 ; 0950-0839
卷号	80 期号:8 页码:525-533
摘要	This letter reveals the dislocation arrangements characterization of deformation bands (denoted DBII) in a copper single crystal fatigued at a high strain amplitude gamma(pl) = 8 X 10(-3). The results show that the surface deformation morphology of the crystal displays the following features. (1) Primary slip bands (SBs) were formed after 2 x 10(4) cycles and these carried a relatively homogeneous and small plastic strain. (3) Secondary slip bands did not operate during cyclic deformation. (3) Deformation bands (DBs) with a width of 50 mu m were homogeneously distributed over the whole surface of the crystal and were perpendicular to the SBs. (4) Dislocation patterns within the SBs often consisted of irregular structures, which did not show a persistent feature. The results indicate that these SBs are not typical persistent slip bands (PSBs). (5) Within the DBII, the microstructure can be classified into two types. One type consists of regular 100% ladder-like parallel PSBs. The other type is full of dislocation walls parallel to DB direction, which have not been reported previously. By crystallographic analysis of the DBII, it is shown that the habit plane of the DBII should correspond to the ((1) over bar 01) plane. Based on the observations above, it is suggested that the formation of DBII should be attributed to the local regularization of dislocation walls within primary slip bands.; This letter reveals the dislocation arrangements characterization of deformation bands (denoted DBII) in a copper single crystal fatigued at a high strain amplitude gamma(pl) = 8 X 10(-3). The results show that the surface deformation morphology of the crystal displays the following features. (1) Primary slip bands (SBs) were formed after 2 x 10(4) cycles and these carried a relatively homogeneous and small plastic strain. (3) Secondary slip bands did not operate during cyclic deformation. (3) Deformation bands (DBs) with a width of 50 mu m were homogeneously distributed over the whole surface of the crystal and were perpendicular to the SBs. (4) Dislocation patterns within the SBs often consisted of irregular structures, which did not show a persistent feature. The results indicate that these SBs are not typical persistent slip bands (PSBs). (5) Within the DBII, the microstructure can be classified into two types. One type consists of regular 100% ladder-like parallel PSBs. The other type is full of dislocation walls parallel to DB direction, which have not been reported previously. By crystallographic analysis of the DBII, it is shown that the habit plane of the DBII should correspond to the ((1) over bar 01) plane. Based on the observations above, it is suggested that the formation of DBII should be attributed to the local regularization of dislocation walls within primary slip bands.
部门归属	chinese acad sci, inst met res, state key lab fatigue & fracture mat, shenyang 110015, peoples r china.;zhang, zf (reprint author), chinese acad sci, inst met res, state key lab fatigue & fracture mat, shenyang 110015, peoples r china ; chinese acad sci, inst met res, state key lab fatigue & fracture mat, shenyang 110015, peoples r china.;zhang, zf (reprint author), chinese acad sci, inst met res, state key lab fatigue & fracture mat, shenyang 110015, peoples r china
关键词	Electron Channeling Contrast Electron Channeling Contrast Double Slip Orientation Double Slip Orientation Stereographic Stereographic Triangle Triangle Behavior Behavior Microscopy Microscopy Surface Surface Damage Damage Side Side
URL	查看原文 ; 查看原文
WOS记录号	WOS:000088697300003 ; WOS:000088697300003
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37265
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. F. Zhang,Z. G. Wang,S. X. Li. Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal, Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal[J]. Philosophical Magazine Letters, Philosophical Magazine Letters,2000, 2000,80, 80(8):525-533, 525-533.
APA	Z. F. Zhang,Z. G. Wang,&S. X. Li.(2000).Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal.Philosophical Magazine Letters,80(8),525-533.
MLA	Z. F. Zhang,et al."Dislocation arrangements and crystallographic characterization of deformation band in fatigued copper single crystal".Philosophical Magazine Letters 80.8(2000):525-533.