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Oxidation behavior of sputtered Ni-3Cr-20Al nanocrystalline coating
G. F. Chen; H. Y. Lou
1999
发表期刊Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing
ISSN0921-5093
卷号271期号:1-2页码:360-365
摘要The oxidation behavior of cast Ni-3Cr-20Al (at%) alloy and its sputtered nanocrystalline coating were investigated at 1000 degrees C in air. Owing to the formation of the transient gamma-Al2O3, theta-Al2O3 in the initial oxidation period, the mass gains were very rapid. With the transformation of the transition Al2O3 to stable alpha-Al2O3 the oxidation kinetics became nearly flat. alpha-Al2O3 and NiAl2O4 were both formed on the sputtered Ni-3Cr-20Al coating after 200-h oxidation. The formation of NiAl2O4 was probably related to the formation of Ni3Al during the oxidation process. The formation mechanism of NiAl2O4 is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.
部门归属acad sinica, inst corros & protect met, state key lab corros & protect, shenyang 110015, peoples r china.;chen, gf (reprint author), acad sinica, inst corros & protect met, state key lab corros & protect, shenyang 110015, peoples r china
关键词Oxidation Ni-3cr-20al Magnetron Sputtering Nanocrystalline Selective Oxidation Degrees c High-temperature Grain-size Superalloy Alloys Scales K38g
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WOS记录号WOS:000083647800046
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被引频次:21[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37318
专题中国科学院金属研究所
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G. F. Chen,H. Y. Lou. Oxidation behavior of sputtered Ni-3Cr-20Al nanocrystalline coating[J]. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,1999,271(1-2):360-365.
APA G. F. Chen,&H. Y. Lou.(1999).Oxidation behavior of sputtered Ni-3Cr-20Al nanocrystalline coating.Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,271(1-2),360-365.
MLA G. F. Chen,et al."Oxidation behavior of sputtered Ni-3Cr-20Al nanocrystalline coating".Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing 271.1-2(1999):360-365.
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