Oxidation kinetics of sputtered Ni-5Cr-5Al nanocrystalline coating at 900 degrees C and 1000 degrees C | |
G. F. Chen; H. Y. Lou | |
1999 | |
Source Publication | Nanostructured Materials
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ISSN | 0965-9773 |
Volume | 11Issue:5Pages:637-641 |
Abstract | Isothermal oxidation of sputtered Ni-5Cr-5Al (at%) nanocrystalline coatings were investigated at 900 degrees C and 1000 degrees C in air. Both of them showed low oxidation rates. The oxidation kinetics of sputtered Ni-5Cr-5Al coating was much slower than that predicted by parabolic kinetics of scale growth by lattice or volume diffusion. The much smaller oxide grains could be formed on sputtered coating thereby higher density of grain boundary could be existed in the oxide scale than that formed on cast alloy. Taking the short circuit diffusion through grain boundaries into account, an oxidation kinetic with fourth power law was derived. The excellent results in agreement with the experimental data were obtained. (C)1999 Acta Metallurgica Inc. |
description.department | acad sinica, inst corros & protect met, state key lab corros & protect, shenyang 110015, peoples r china.;chen, gf (reprint author), acad sinica, inst corros & protect met, state key lab corros & protect, shenyang 110015, peoples r china |
Keyword | High-temperature Superalloy Behavior K38g |
URL | 查看原文 |
WOS ID | WOS:000083180500010 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/37320 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | G. F. Chen,H. Y. Lou. Oxidation kinetics of sputtered Ni-5Cr-5Al nanocrystalline coating at 900 degrees C and 1000 degrees C[J]. Nanostructured Materials,1999,11(5):637-641. |
APA | G. F. Chen,&H. Y. Lou.(1999).Oxidation kinetics of sputtered Ni-5Cr-5Al nanocrystalline coating at 900 degrees C and 1000 degrees C.Nanostructured Materials,11(5),637-641. |
MLA | G. F. Chen,et al."Oxidation kinetics of sputtered Ni-5Cr-5Al nanocrystalline coating at 900 degrees C and 1000 degrees C".Nanostructured Materials 11.5(1999):637-641. |
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