Structure and heat capacity of wurtzite GaN from 113 to 1073 K | |
X. L. Chen; Y. C. Lan; J. K. Liang; X. R. Cheng; Y. P. Cu; T. Xu; P. Z. Jiang; K. Q. Lu | |
1999 | |
发表期刊 | Chinese Physics Letters
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ISSN | 0256-307X |
卷号 | 16期号:2页码:107-108 |
摘要 | High pure wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder x-ray diffraction using the Rietveld technique. The heat capacity C-p was measured from 113 to 1073 K, which can be represented by C-p = 0.362 + 3.010 x 10(-4)T - 3.411 x 10(3)T(-2) - 7.791 x 10(-8)T(2). NO measurable phase transition was observed in this temperature range. |
部门归属 | chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, ctr condensed matter phys, beijing 100080, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;chen, xl (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china |
关键词 | Light-emitting-diodes High-pressure Phase Gallium Nitride Transition |
URL | 查看原文 |
WOS记录号 | WOS:000079394100011 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/37328 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. L. Chen,Y. C. Lan,J. K. Liang,et al. Structure and heat capacity of wurtzite GaN from 113 to 1073 K[J]. Chinese Physics Letters,1999,16(2):107-108. |
APA | X. L. Chen.,Y. C. Lan.,J. K. Liang.,X. R. Cheng.,Y. P. Cu.,...&K. Q. Lu.(1999).Structure and heat capacity of wurtzite GaN from 113 to 1073 K.Chinese Physics Letters,16(2),107-108. |
MLA | X. L. Chen,et al."Structure and heat capacity of wurtzite GaN from 113 to 1073 K".Chinese Physics Letters 16.2(1999):107-108. |
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