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Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
C. L. Heng; B. R. Zhang; Y. P. Qiao; Z. C. Ma; W. H. Zong; G. G. Qin
1999
发表期刊Physica B-Condensed Matter
ISSN0921-4526
卷号270期号:1-2页码:104-109
摘要Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO2) superlattice/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 superlattices and from input electrical power are studied systematically. (C) 1999 Elsevier Science B.V. All rights reserved.
部门归属peking univ, dept phys, beijing 100871, peoples r china. minist elect ind, inst 13, natl lab gaas ic, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词Sio2 Electroluminescence Superlattice Oxidized Porous Silicon Optical-properties Blue Luminescence Origin Films
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WOS记录号WOS:000082100100012
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被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37367
专题中国科学院金属研究所
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C. L. Heng,B. R. Zhang,Y. P. Qiao,et al. Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices[J]. Physica B-Condensed Matter,1999,270(1-2):104-109.
APA C. L. Heng,B. R. Zhang,Y. P. Qiao,Z. C. Ma,W. H. Zong,&G. G. Qin.(1999).Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices.Physica B-Condensed Matter,270(1-2),104-109.
MLA C. L. Heng,et al."Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices".Physica B-Condensed Matter 270.1-2(1999):104-109.
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