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A model of dynamic recrystallisation in alloys during high strain plastic deformation
Q. A. Li; Y. B. Xu; Z. H. Lai; L. T. Shen; Y. L. Bai
1999
发表期刊Journal of Materials Science & Technology
ISSN1005-0302
卷号15期号:5页码:435-438
摘要Recrystallized grains, less than 200 nm in diameter were observed in heavily shear zones of a high strength low alloy steel and a Ni-based alloy, and Also grain refinement, less than 3 mu m in diameter was made in high purity aluminum by ECAE at ambient temperature. The experimental results showed that high strain rate and large deformation could induce dynamic recrystallization. Based on dislocation dynamics and grain orientation change enhanced by plastic deformation, a model for the recrystallization process is developed. The model is used to explain the ultra fine grains which are formed at a temperature still much lower than that for the conventional recrystallization.
部门归属chinese acad sci, inst met res, state key lab fatique & fracture mat, shenyang 110015, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. chinese acad sci, inst mech, lab non linear mech continous media, beijing 100080, peoples r china.;li, qa (reprint author), chinese acad sci, inst met res, state key lab fatique & fracture mat, shenyang 110015, peoples r china
关键词Adiabatic Shear Bands Grain-size Recrystallization Copper Steel
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WOS记录号WOS:000083188600010
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被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37404
专题中国科学院金属研究所
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GB/T 7714
Q. A. Li,Y. B. Xu,Z. H. Lai,et al. A model of dynamic recrystallisation in alloys during high strain plastic deformation[J]. Journal of Materials Science & Technology,1999,15(5):435-438.
APA Q. A. Li,Y. B. Xu,Z. H. Lai,L. T. Shen,&Y. L. Bai.(1999).A model of dynamic recrystallisation in alloys during high strain plastic deformation.Journal of Materials Science & Technology,15(5),435-438.
MLA Q. A. Li,et al."A model of dynamic recrystallisation in alloys during high strain plastic deformation".Journal of Materials Science & Technology 15.5(1999):435-438.
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