Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure

IMR OpenIR

	Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure
	Y. Q. Wang; T. P. Zhao; X. M. Cui; Z. C. Ma; W. H. Zong; G. G. Qin
	1999
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	16 期号:8 页码:605-607
摘要	After an Si oxide layer of 3 nm thickness had been grown by using magnetron sputtering on a p-type Si (100) substrate, an indium tin oxide (ITO) film was deposited onto the Si oxide layer by using electron beam deposition. Electroluminescence (EL) from such an ITO/Si oxide/p-type Si structure was measured under a forward bias of 5 V or more. Its EL power efficiency is about eight times as large as that of a semitransparent Au/Si oxide (3 nm)/p-Si structure. The experimental results indicate that the greater EL power efficiency is due not only to the higher optical transparency of the ITO film compared with Au film in a range of 300 to 900 nm, but also to some new luminescence centers introduced in the Si oxide layer during the ITO deposition process.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. minsit elect ind, inst 13, shijiazhuang 050051, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;wang, yq (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Visible Electroluminescence Porous Silicon P-si Diodes Films
URL	查看原文
WOS记录号	WOS:000082288500022
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37525
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Q. Wang,T. P. Zhao,X. M. Cui,et al. Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure[J]. Chinese Physics Letters,1999,16(8):605-607.
APA	Y. Q. Wang,T. P. Zhao,X. M. Cui,Z. C. Ma,W. H. Zong,&G. G. Qin.(1999).Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure.Chinese Physics Letters,16(8),605-607.
MLA	Y. Q. Wang,et al."Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure".Chinese Physics Letters 16.8(1999):605-607.