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Lattice-distortion-induced amorphization in indented 110 silicon
Y. Q. Wu; Y. B. Xu
1999
发表期刊Journal of Materials Research
ISSN0884-2914
卷号14期号:3页码:682-687
摘要High resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.
部门归属acad sinica, inst met res, state key lab fatigue & fracture mat, shenyang 110015, peoples r china. acad sinica, inst met res, atom imaging solids lab, shenyang 110015, peoples r china.;wu, yq (reprint author), acad sinica, inst met res, state key lab fatigue & fracture mat, shenyang 110015, peoples r china
关键词Electron-microscopy Crystal Indentations Transitions Phases
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37537
专题中国科学院金属研究所
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Y. Q. Wu,Y. B. Xu. Lattice-distortion-induced amorphization in indented 110 silicon[J]. Journal of Materials Research,1999,14(3):682-687.
APA Y. Q. Wu,&Y. B. Xu.(1999).Lattice-distortion-induced amorphization in indented 110 silicon.Journal of Materials Research,14(3),682-687.
MLA Y. Q. Wu,et al."Lattice-distortion-induced amorphization in indented 110 silicon".Journal of Materials Research 14.3(1999):682-687.
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