Nucleation kinetics of diamond in hot filament chemical vapor deposition | |
J. Yu; R. F. Huang; L. S. Wen; C. X. Shi | |
1999 | |
Source Publication | Materials Research Bulletin
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ISSN | 0025-5408 |
Volume | 34Issue:14-15Pages:2319-2325 |
Abstract | Diamond nucleation on (111)-oriented monocrystalline silicon wafer was investigated by hot filament chemical vapor deposition (HFCVD). The variation of nucleation density with time was determined. For a lower gas flow rate, the nucleation density-time curve comprises two parts, which represent the nucleation at surface defects and smoothly intact surface sites. For a higher gas flow rate, the distinction between the two parts in the curve tends to vanish. Diamond nucleation was enhanced by increasing the gas flow rate. (C) 2000 Elsevier Science Ltd. |
description.department | chinese acad sci, inst met res, shenyang 110015, peoples r china.;yu, j (reprint author), chinese acad sci, inst met res, shenyang 110015, peoples r china |
Keyword | Thin Films Vapor Deposition Carbon-films Low-pressure Growth Pretreatment Enhancement |
URL | 查看原文 |
WOS ID | WOS:000086214100023 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/37557 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | J. Yu,R. F. Huang,L. S. Wen,et al. Nucleation kinetics of diamond in hot filament chemical vapor deposition[J]. Materials Research Bulletin,1999,34(14-15):2319-2325. |
APA | J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1999).Nucleation kinetics of diamond in hot filament chemical vapor deposition.Materials Research Bulletin,34(14-15),2319-2325. |
MLA | J. Yu,et al."Nucleation kinetics of diamond in hot filament chemical vapor deposition".Materials Research Bulletin 34.14-15(1999):2319-2325. |
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