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Nucleation kinetics of diamond in hot filament chemical vapor deposition
J. Yu; R. F. Huang; L. S. Wen; C. X. Shi
1999
Source PublicationMaterials Research Bulletin
ISSN0025-5408
Volume34Issue:14-15Pages:2319-2325
AbstractDiamond nucleation on (111)-oriented monocrystalline silicon wafer was investigated by hot filament chemical vapor deposition (HFCVD). The variation of nucleation density with time was determined. For a lower gas flow rate, the nucleation density-time curve comprises two parts, which represent the nucleation at surface defects and smoothly intact surface sites. For a higher gas flow rate, the distinction between the two parts in the curve tends to vanish. Diamond nucleation was enhanced by increasing the gas flow rate. (C) 2000 Elsevier Science Ltd.
description.departmentchinese acad sci, inst met res, shenyang 110015, peoples r china.;yu, j (reprint author), chinese acad sci, inst met res, shenyang 110015, peoples r china
KeywordThin Films Vapor Deposition Carbon-films Low-pressure Growth Pretreatment Enhancement
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WOS IDWOS:000086214100023
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/37557
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
J. Yu,R. F. Huang,L. S. Wen,et al. Nucleation kinetics of diamond in hot filament chemical vapor deposition[J]. Materials Research Bulletin,1999,34(14-15):2319-2325.
APA J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1999).Nucleation kinetics of diamond in hot filament chemical vapor deposition.Materials Research Bulletin,34(14-15),2319-2325.
MLA J. Yu,et al."Nucleation kinetics of diamond in hot filament chemical vapor deposition".Materials Research Bulletin 34.14-15(1999):2319-2325.
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