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Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering
L. P. Zheng; S. Qiu; S. Y. Li
1999
发表期刊Applied Surface Science
ISSN0169-4332
卷号143期号:1-4页码:215-218
摘要Nonstoichiometric effects in the zero-fluence sputtering of a natural Cu(111) target (69.1% Cu-63, 30.9% Cu-65) irradiated with normally incident Ar+ ions from 50 to 1000 eV have been studied by use of a molecular dynamics (MD) simulation code. Calculations show that the isotopic ratios in the normal direction and at oblique angles, their difference, and the total isotopic ratio increase as the bombarding energy decreases. (C) 1999 Elsevier Science B.V. All rights reserved.
部门归属acad sinica, shanghai inst nucl res, shanghai 201800, peoples r china. acad sinica, inst met res, atom imaging solids lab, shenyang 110015, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;zheng, lp (reprint author), acad sinica, shanghai inst nucl res, pob 800-204, shanghai 201800, peoples r china
关键词Molecular Dynamics Simulation Isotopic Mass Effect Zero-fluence Low-bombarding-energy Sputtering Mo-92-mo-100 Fractionation Mixtures
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WOS记录号WOS:000080074200027
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37594
专题中国科学院金属研究所
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L. P. Zheng,S. Qiu,S. Y. Li. Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering[J]. Applied Surface Science,1999,143(1-4):215-218.
APA L. P. Zheng,S. Qiu,&S. Y. Li.(1999).Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering.Applied Surface Science,143(1-4),215-218.
MLA L. P. Zheng,et al."Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering".Applied Surface Science 143.1-4(1999):215-218.
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