Theoretical studies of the g factor of V3+ in III-V semiconductors

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	Theoretical studies of the g factor of V3+ in III-V semiconductors
	W. C. Zheng; S. Y. Wu; W. Li
	1999
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	14 期号:9 页码:883-885
摘要	A two spin-orbit coupling parameter model based on a cluster approach is presented in this paper for the calculations of the g factor for V3+ ions in the cation sites of GaP, InP and GaAs crystals. In this model, differing from the conventional one spin-orbit coupling parameter model, both the contributions from the spin-orbit coupling of the central 3d(2) ion and those of ligand ions are included. By using the parameters obtained from the optical spectra of the studied crystals, the calculated g shifts (g - 2.0023) are in good agreement with the observed values. Various contributions to the g shift are discussed.
部门归属	sichuan univ, dept mat sci, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;zheng, wc (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china
关键词	Electron-paramagnetic-resonance Transition-metal Impurities Vanadium Gaas Crystal Epr Spectra Cr2++ Gap Inp
URL	查看原文
WOS记录号	WOS:000082864400023
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37607
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. C. Zheng,S. Y. Wu,W. Li. Theoretical studies of the g factor of V3+ in III-V semiconductors[J]. Semiconductor Science and Technology,1999,14(9):883-885.
APA	W. C. Zheng,S. Y. Wu,&W. Li.(1999).Theoretical studies of the g factor of V3+ in III-V semiconductors.Semiconductor Science and Technology,14(9),883-885.
MLA	W. C. Zheng,et al."Theoretical studies of the g factor of V3+ in III-V semiconductors".Semiconductor Science and Technology 14.9(1999):883-885.