Electroluminescence from Si/Si oxynitride superlattices

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	Electroluminescence from Si/Si oxynitride superlattices
	G. F. Bai; Y. P. Qiao; Z. C. Ma; W. H. Zong; G. G. Qin
	1998
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	72 期号:26 页码:3408-3410
摘要	The Si/Si oxynitride superlattices, with three periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si oxynitride layers and Si layers in the superlattices are 2.0 and 1.4 nm, respectively. Visible electroluminescence (EL) from a semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure has been observed. Each EL spectrum of the structure has a dominant peak around 640 nm, a weaker peak around 520 nm, and a shoulder around 820 nm. By comparing the EL from the semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure with that from a semitransparent Au film/Si oxynitride film/ p-Si structure, we found that the EL efficiency of the former structure is about 2-4 times of that of the latter one. (C) 1998 American Institute of Physics.
部门归属	beijing univ, dept phys, beijing 100871, peoples r china. minist elect ind, inst 13, natl lab gaas ic, shijiazhuang 050051, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;bai, gf (reprint author), beijing univ, dept phys, beijing 100871, peoples r china
关键词	Chemical-vapor-deposition Silicon-nitride Films Optical-properties Spectra
URL	查看原文
WOS记录号	WOS:000075274700004
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37625
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. F. Bai,Y. P. Qiao,Z. C. Ma,et al. Electroluminescence from Si/Si oxynitride superlattices[J]. Applied Physics Letters,1998,72(26):3408-3410.
APA	G. F. Bai,Y. P. Qiao,Z. C. Ma,W. H. Zong,&G. G. Qin.(1998).Electroluminescence from Si/Si oxynitride superlattices.Applied Physics Letters,72(26),3408-3410.
MLA	G. F. Bai,et al."Electroluminescence from Si/Si oxynitride superlattices".Applied Physics Letters 72.26(1998):3408-3410.