Photoluminescence from nanometer Ge particle embedded Si oxide films

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	Photoluminescence from nanometer Ge particle embedded Si oxide films
	S. Y. Ma; Z. C. Ma; W. H. Zong; H. X. Han; Z. P. Wang; G. H. Li; G. Qin; G. G. Qin
	1998
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	84 期号:1 页码:559-563
摘要	Nanometer Ge particle (NGP) embedded Si oxide films were deposited on p-type Si substrates using the rf magnetron sputtering technique with a Ge-SiO2 composite target. The area ratio percentage of the Ge target to the composite target was 5%. These films were annealed in a N-2 ambient at 300, 600, 800, or 900 degrees C for 30 min. By fitting Raman scattering spectra, the average diameters of,the NGPs in the films were determined. They increased from 5.4 to 9.5 nm with increasing annealing temperatures from 600 to 900 degrees C. The photoluminescence (PL) peaks for all NGP embedded Si oxide films annealed at various temperatures are located at almost the same position around 580 nm (2.1. eV), although the average sizes of the NGPs in these films are very different from each other. After gamma-ray irradiation, the PL peak intensity increases by a factor of 2.3, with the peak position unchanged. The PL peak position does not show any evident shift when the measurement temperature increases from 10 to 300 K. All experimental facts indicate that Light emission originates mainly from the luminescence centers in the SiOx films covering the NGPs rather than from the NGPs. The role of NGPs in the PL process of the films is discussed. (C) 1998 American Institute of Physics.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. nw normal univ, dept phys, lanzhou 730070, peoples r china. natl lab gaas ic, shijiazhuang 050051, peoples r china. natl lab superlattices & microstruct, beijing 100083, peoples r china. nanjing univ, dept phys, nanjing 210008, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Visible Photoluminescence Porous Silicon Luminescence Confinement Mechanism Matrix Raman
URL	查看原文
WOS记录号	WOS:000075258100080
引用统计	被引频次：23[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37736
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. Y. Ma,Z. C. Ma,W. H. Zong,et al. Photoluminescence from nanometer Ge particle embedded Si oxide films[J]. Journal of Applied Physics,1998,84(1):559-563.
APA	S. Y. Ma.,Z. C. Ma.,W. H. Zong.,H. X. Han.,Z. P. Wang.,...&G. G. Qin.(1998).Photoluminescence from nanometer Ge particle embedded Si oxide films.Journal of Applied Physics,84(1),559-563.
MLA	S. Y. Ma,et al."Photoluminescence from nanometer Ge particle embedded Si oxide films".Journal of Applied Physics 84.1(1998):559-563.