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High temperature creep behaviour of a Si3N4 whisker reinforced Al-Fe-V-Si composite
L. M. Peng; S. J. Zhu; H. R. Chen; F. G. Wang; Z. Y. Ma; J. Bi
1998
发表期刊Journal of Materials Science & Technology
ISSN1005-0302
卷号14期号:6页码:527-532
摘要The creep behaviour of beta-Si3N4 whisker reinforced Al-8.5Fe-1.3V-1.7Si composite has been investigated at the temperature 773 and 823 K. The results are characterized by high stress exponent and high apparent creep activation energy. The creep data can be interpreted based on the incorporation of a threshold stress and a load transfer coefficient into the power-law creep equation. A good correlation between the normalized creep rate and normalized effective stress is available which demonstrates that the creep behaviour of both the alloy and the composite is controlled by the matrix lattice self-diffusion in Al. Examination on microstructure shows that edge dislocations exist at the interfaces between two adjacent whiskers and the interfaces emit edge dislocations in parallel paired-columns.
部门归属dalian univ technol, dept mat engn, dalian 116023, peoples r china. chinese acad sci, inst met res, shenyang 110015, peoples r china.;wang, fg (reprint author), dalian univ technol, dept mat engn, dalian 116023, peoples r china
关键词Deformation-behavior Elevated-temperature Matrix Composites Steady-state Alloys Aluminum Stability Fibers Stress
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WOS记录号WOS:000077212000008
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被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37748
专题中国科学院金属研究所
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L. M. Peng,S. J. Zhu,H. R. Chen,et al. High temperature creep behaviour of a Si3N4 whisker reinforced Al-Fe-V-Si composite[J]. Journal of Materials Science & Technology,1998,14(6):527-532.
APA L. M. Peng,S. J. Zhu,H. R. Chen,F. G. Wang,Z. Y. Ma,&J. Bi.(1998).High temperature creep behaviour of a Si3N4 whisker reinforced Al-Fe-V-Si composite.Journal of Materials Science & Technology,14(6),527-532.
MLA L. M. Peng,et al."High temperature creep behaviour of a Si3N4 whisker reinforced Al-Fe-V-Si composite".Journal of Materials Science & Technology 14.6(1998):527-532.
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