| Amorphous B-C-N semiconductor | |
| B. Yao; W. J. Chen; L. Liu; B. Z. Ding; W. H. Su | |
| 1998 | |
| Source Publication | Journal of Applied Physics
 |
| ISSN | 0021-8979 |
| Volume | 84Issue:3Pages:1412-1415 |
| Abstract | Amorphous BC2N powders were prepared by mechanical milling with hexagonal boron nitride and graphite as starting materials. A bulk amorphous BC2N compound was produced by sintering the as-milled amorphous BC2N powders in a vacuum of 10(-5) Torr at a temperature of 1470 K. The conductivity measurement for the bulk amorphous BC2N compound showed that it behaves as a semiconductor with band gap energy of 0.11 eV for temperatures ranging from room temperature to 560 K and a semimetal for temperatures between 560 and 740 K. The mechanism of the formation of the amorphous BC2N powders is discussed. (C) 1998 American Institute of Physics. |
| description.department | jilin univ, dept phys, changchun 130023, peoples r china. acad sinica, inst met res, state key lab rsa, shenyang 110015, peoples r china. siping normal coll, dept phys, siping 136000, peoples r china.;yao, b (reprint author), jilin univ, dept phys, changchun 130023, peoples r china |
| Keyword | Bc2n |
| URL | 查看原文 |
| WOS ID | WOS:000075294600040 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/37848 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | B. Yao,W. J. Chen,L. Liu,et al. Amorphous B-C-N semiconductor[J]. Journal of Applied Physics,1998,84(3):1412-1415. |
| APA | B. Yao,W. J. Chen,L. Liu,B. Z. Ding,&W. H. Su.(1998).Amorphous B-C-N semiconductor.Journal of Applied Physics,84(3),1412-1415. |
| MLA | B. Yao,et al."Amorphous B-C-N semiconductor".Journal of Applied Physics 84.3(1998):1412-1415. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment