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Galvanostatic electrodeposition and microstructure of copper (I) oxide film
Y. C. Zhou; J. A. Switzer
1998
发表期刊Materials Research Innovations
ISSN1432-8917
卷号2期号:1页码:22-27
摘要Polycrystalline copper (I) oxide films were deposited on stainless steel substrate by galvanostatic electrodeposition method and were characterized by Xray diffraction and scanning electron microscopy. The effect of bath temperature, bath pH and current density on the compositon, grain size, surface texture and surface morphology of the electrodeposited films were investigated. The films deposited at low bath pH (less than or equal to 7) consisted of copper (I) oxide and metallic copper; while the films deposited at bath pH between 8 and 12 and bath temperature of 60 degrees C were pure copper (I) oxide. The preferred orientation of the copper (I) oxide films depended on the relative growth rate of (111) and (200) faces and could be controlled by adjusting the bath pH and/or the cathodic current density. (100)-oriented copper (1) oxide films could be deposited at pH=9 and current densities in the range of 0.25-1 mA/cm(2) while (111)-oriented films could be prepared at pH=12 or at pH=9 using the current densities between 1.5-2.5 mA/cm(2). Computer simulated crystallite shapes showed that the crystal shape changed from octahedral for (100)-oriented film to trucated pyramids and cubs for (111)-oriented film. And they were approved by scanning electron microscopy.
部门归属acad sinica, inst met res, shenyang 110015, peoples r china. univ missouri, dept chem, rolla, mo 65401 usa. univ missouri, grad ctr mat res, rolla, mo 65401 usa.;zhou, yc (reprint author), acad sinica, inst met res, 72 wenhua rd, shenyang 110015, peoples r china;yczhou@imr.ac.cn
关键词Copper(i) Oxide Electrochemical Deposition Thin Films Microstructure Electrochemical Synthesis Thin-films
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WOS记录号WOS:000074174400004
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被引频次:78[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37926
专题中国科学院金属研究所
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Y. C. Zhou,J. A. Switzer. Galvanostatic electrodeposition and microstructure of copper (I) oxide film[J]. Materials Research Innovations,1998,2(1):22-27.
APA Y. C. Zhou,&J. A. Switzer.(1998).Galvanostatic electrodeposition and microstructure of copper (I) oxide film.Materials Research Innovations,2(1),22-27.
MLA Y. C. Zhou,et al."Galvanostatic electrodeposition and microstructure of copper (I) oxide film".Materials Research Innovations 2.1(1998):22-27.
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