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Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions
A. P. Li; L. D. Zhang; Y. P. Qiao; G. G. Qin; Z. C. Ma; W. H. Zong; X. Wang; H. W. Hu
1997
发表期刊Journal of Physics-Condensed Matter
ISSN0953-8984
卷号9期号:24页码:5245-5252
摘要Si oxynitride films (with thicknesses of about 40-80 Angstrom) with different chemical compositions were deposited on Si wafers by three kinds of method: electron cyclotron resonance (ECR) chemical vapour deposition, magnetron sputtering, and direct nitration of Si wafers in an ECR plasma. The chemical composition of Si oxynitride films was examined by x-ray photoelectron spectroscopy. Electroluminescence (EL) from the semitransparent Au/Si oxynitride film/Si structures, and the effects of chemical composition of the films on EL have been studied. The dependence of EL on thermal annealing has also been reported. Experimental results show that the dominant EL peak position varies from 640 to 700 nm, but the shoulders at about 520 and 820 nm have no apparent shift when the Si content in the Si oxynitride films increases.
部门归属13th inst minist elect ind,shijiazhuang 050051,peoples r china. natl ctr optoelect technol,beijing 100083,peoples r china. acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;li, ap (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词Silicon-nitride Films Vapor-deposition Optical-properties Amorphous Films Oxide Spectra
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/37992
专题中国科学院金属研究所
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GB/T 7714
A. P. Li,L. D. Zhang,Y. P. Qiao,et al. Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions[J]. Journal of Physics-Condensed Matter,1997,9(24):5245-5252.
APA A. P. Li.,L. D. Zhang.,Y. P. Qiao.,G. G. Qin.,Z. C. Ma.,...&H. W. Hu.(1997).Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions.Journal of Physics-Condensed Matter,9(24),5245-5252.
MLA A. P. Li,et al."Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions".Journal of Physics-Condensed Matter 9.24(1997):5245-5252.
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