UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy

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	UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy
	F. X. Liu; J. Y. Qian; X. L. Wang; L. Liu; H. Ming
	1997
发表期刊	Physical Review B
ISSN	0163-1829
卷号	56 期号:6 页码:3066-3071
摘要	Microstructural changes of two GeO2-SiO2 glass compositions (with 5 and 13 mol % GeO2) irradiated with 5 and 6.4 eV light have been investigated by Raman spectroscopy. The low-frequency ''Boson'' bands at 50 cm(-1) of both samples shift upward upon irradiation, but their intensities have opposite changes. It indicates that thermal damage of the surface by energetic UV photons is correlated with the Ge content of the glass. The intensities of both defect lines D-1 and D-2 increase with respect to omega(1) and omega(3) and the omega(1) and omega(3) bands shift to higher frequencies which means a reduction of the Si-O-Si bond angle upon irradiation. This may be due to the change in ring statistics in favor of smaller rings, that is, sixfold rings transform to threefold and fourfold rings upon UV irradiation. The opposite changes in intensity of omega(1) and omega(3) bands result from the variation of the network structure. UV photoinduced bond breaking allows structural relaxation of the nonequilibrium glass network that leads to photoinduced Raman changes and the photoinduced index changes in photosensitive glasses.
部门归属	univ sci & technol china,struct res lab,hefei 230026,peoples r china. univ sci & technol china,ctr fundamental phys,hefei 230026,peoples r china. univ sci & technol china,dept phys,hefei 230026,peoples r china. univ sci & technol china,dept modern phys,hefei 230026,peoples r china. univ sci & technol china,dept comp sci & technol,hefei 230026,peoples r china.;liu, fx (reprint author), acad sinica,int ctr mat phys,shenyang 110015,peoples r china
关键词	Optical Fibers Vibrational-spectra Vitreous Sio2 Photorefractivity Photosensitivity Stability Dynamics Centers Silica Model
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38013
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	F. X. Liu,J. Y. Qian,X. L. Wang,et al. UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy[J]. Physical Review B,1997,56(6):3066-3071.
APA	F. X. Liu,J. Y. Qian,X. L. Wang,L. Liu,&H. Ming.(1997).UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy.Physical Review B,56(6),3066-3071.
MLA	F. X. Liu,et al."UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy".Physical Review B 56.6(1997):3066-3071.