Magnetic properties of R2Fe14M3 compounds with M=Ga and Si; R=Y, Nd, Sm, Gd, Tb, Dy, Ho, Er and Tm | |
B. G. Shen; B. Liang; Z. H. Cheng; H. Y. Gong; W. S. Zhan; H. Tang; F. R. deBoer; J. H. J. Buschow | |
1997 | |
发表期刊 | Solid State Communications
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ISSN | 0038-1098 |
卷号 | 103期号:2页码:71-75 |
摘要 | Samples with composition R2Fe14M3 (M = Ga and Si; R = Y, Nd, Sm, Gd, Tb, Dy, Ho, Er and Tm) have been prepared by are-melting. Crystal-structure studies have shown that the prepared samples are single phase with the rhombohedral Th2Zn17 and/or the hexagonal Th2Ni17 structure. Substitution of Ga for Fe in R2Fe17 leads to an increase of the unit-cell volume, whereas Si substitution reduces the unit-cell volume. The Curie temperatures of the R2Fe14Ga3 and R2Fe14Si3 compounds are much larger than those of the corresponding R2Fe17 compounds. The Fe moment decreases upon Ga or Si substitution. The compounds R2Fe14Ga3 and R2Fe14Si3 With R = Er and Tm exhibit a spin-reorientation transition at low temperature. (C) 1997 Elsevier Science Ltd. |
部门归属 | chinese acad sci,ctr condensed matter phys,beijing 100080,peoples r china. acad sinica,inst met res,shenyang 110015,peoples r china. univ amsterdam,van der waals zeeman inst,nl-1018 xe amsterdam,netherlands.;shen, bg (reprint author), chinese acad sci,inst phys,state key lab magnetism,pob 603,beijing 100080,peoples r china |
关键词 | Neutron-diffraction Solid-solutions Substitution Anisotropy Nd2fe17 |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/38070 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | B. G. Shen,B. Liang,Z. H. Cheng,et al. Magnetic properties of R2Fe14M3 compounds with M=Ga and Si; R=Y, Nd, Sm, Gd, Tb, Dy, Ho, Er and Tm[J]. Solid State Communications,1997,103(2):71-75. |
APA | B. G. Shen.,B. Liang.,Z. H. Cheng.,H. Y. Gong.,W. S. Zhan.,...&J. H. J. Buschow.(1997).Magnetic properties of R2Fe14M3 compounds with M=Ga and Si; R=Y, Nd, Sm, Gd, Tb, Dy, Ho, Er and Tm.Solid State Communications,103(2),71-75. |
MLA | B. G. Shen,et al."Magnetic properties of R2Fe14M3 compounds with M=Ga and Si; R=Y, Nd, Sm, Gd, Tb, Dy, Ho, Er and Tm".Solid State Communications 103.2(1997):71-75. |
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