Enhancement of the HFCVD diamond growth process by directed gas flow

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	Enhancement of the HFCVD diamond growth process by directed gas flow
	J. Yu; R. F. Huang; L. S. Wen; C. X. Shi
	1997
发表期刊	Materials Letters
ISSN	0167-577X
卷号	32 期号:2-3 页码:143-146
摘要	The effect of gas flow rate on the growth rate of hot-filament CVD diamond is reported. With increasing gas flow rate, the growth rate of the HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing through the filamentary heater region and to increase the quantity of reactive gas mixture reaching the substrate surface per unit time. Eventually the growth rate of 8.67 mu m/h was obtained at the gas flow rate of 800 sccm.
部门归属	yu, j (reprint author), acad sinica,inst met res,shenyang 110015,peoples r china
关键词	Diamond Hfcvd Gas Flow Rate Growth Rate Active Species Low-pressure Deposition
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38180
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Yu,R. F. Huang,L. S. Wen,et al. Enhancement of the HFCVD diamond growth process by directed gas flow[J]. Materials Letters,1997,32(2-3):143-146.
APA	J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1997).Enhancement of the HFCVD diamond growth process by directed gas flow.Materials Letters,32(2-3),143-146.
MLA	J. Yu,et al."Enhancement of the HFCVD diamond growth process by directed gas flow".Materials Letters 32.2-3(1997):143-146.