Continuous CoSi2 layers in silicon synthesized by Co-ion implantation

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	Continuous CoSi2 layers in silicon synthesized by Co-ion implantation
	J. Z. Zhang; X. Y. Ye; J. Chang; S. Bernard
	1997
发表期刊	Materials Letters
ISSN	0167-577X
卷号	32 期号:2-3 页码:121-126
摘要	CoSi2 thin layers were fabricated by Co-ion implantation into Si(100) and subsequent annealing. The ion implantation was carried out in a metal vapour vacuum are (MEVVA) source implanter. Various doses of Co ions were implanted using doses of 1.6 x 10(17) to 7.5 x 10(17) Co/cm(2) at an extraction voltage of 40 kV and ion current densities of 60 and 150 mu A/cm(2). It was found that the thicknesses of continuous CoSi2 layers after annealing within Si(100) increased with increasing implantation dose, and ranged from 43 to 60 nm for the implantation doses used in this work. The specific resistivity of implanted samples after annealing was between 12.1 and 13.8 mu Omega cm at room temperature. The results indicated that the ion current density played an important role in the structure of the CoSi2 layer, and annealing can significantly improve the electrical property of the CoSi2 layers.
部门归属	chinese ctr adv sci & technol,world lab,beijing,peoples r china. tsing hua univ,dept chem,beijing 100084,peoples r china. tsing hua univ,dept mat sci & engn,beijing 100084,peoples r china. ecole cent lyon,elect lab,f-69131 lyon,ecully,france.;zhang, jz (reprint author), acad sinica,int ctr mat phys,shenyang 110015,peoples r china
关键词	Silicide Cobalt Cosi2 Ion implantatIon Buried Cosi2 Beam Synthesis Beta-fesi2 Growth
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38201
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Z. Zhang,X. Y. Ye,J. Chang,et al. Continuous CoSi2 layers in silicon synthesized by Co-ion implantation[J]. Materials Letters,1997,32(2-3):121-126.
APA	J. Z. Zhang,X. Y. Ye,J. Chang,&S. Bernard.(1997).Continuous CoSi2 layers in silicon synthesized by Co-ion implantation.Materials Letters,32(2-3),121-126.
MLA	J. Z. Zhang,et al."Continuous CoSi2 layers in silicon synthesized by Co-ion implantation".Materials Letters 32.2-3(1997):121-126.