STM observation of oxidation morphology of HOPG and boron-doped HOPG

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	STM observation of oxidation morphology of HOPG and boron-doped HOPG
	W. G. Zhang; H. M. Cheng; T. S. Xie; Z. H. Shen; B. L. Zhou; H. Q. Ye
	1997
发表期刊	Carbon
ISSN	0008-6223
卷号	35 期号:12 页码:1839-1841
部门归属	chinese acad sci, inst met res, shenyang 110015, peoples r china. chinese acad sci, lab atom imaging solid, shenyang 110015, peoples r china.;cheng, hm (reprint author), chinese acad sci, inst met res, shenyang 110015, peoples r china
关键词	Highly Oriented Graphite Gasification Oxidation Scanning Tunneling Microscopy Catalytic Properties
URL	查看原文
WOS记录号	WOS:000071527300020
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38213
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. G. Zhang,H. M. Cheng,T. S. Xie,et al. STM observation of oxidation morphology of HOPG and boron-doped HOPG[J]. Carbon,1997,35(12):1839-1841.
APA	W. G. Zhang,H. M. Cheng,T. S. Xie,Z. H. Shen,B. L. Zhou,&H. Q. Ye.(1997).STM observation of oxidation morphology of HOPG and boron-doped HOPG.Carbon,35(12),1839-1841.
MLA	W. G. Zhang,et al."STM observation of oxidation morphology of HOPG and boron-doped HOPG".Carbon 35.12(1997):1839-1841.