Growth characteristics of mercuric iodide single crystal

IMR OpenIR

	Growth characteristics of mercuric iodide single crystal
	Z. H. Li; W. T. Li; J. Liu; S. F. Zhu; B. J. Zhao; S. J. Yin; G. X. Chen; H. Yuan; H. P. Xu
	1996
发表期刊	Crystal Research and Technology
ISSN	0232-1300
卷号	31 期号:8 页码:979-983
摘要	The HgI2 single crystal with few large smooth faces, high quality and 360 g in weight has been grown by a new technique of modified vapour phase located point method, and the growth characteristics of HgI2 single crystals have been investigated in detail It is found by means of X-ray diffraction that the crystals grown with the c-axis parallel or perpendicular to the pedestal plane have both the prism faces {110}.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china. deyang hgi2 single crystals plant,deyang,peoples r china.;li, zh (reprint author), sichuan univ,dept mat sci,chengdu 610064,peoples r china
关键词	Vapor Alpha-hgi2 Hgi2
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38328
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. H. Li,W. T. Li,J. Liu,et al. Growth characteristics of mercuric iodide single crystal[J]. Crystal Research and Technology,1996,31(8):979-983.
APA	Z. H. Li.,W. T. Li.,J. Liu.,S. F. Zhu.,B. J. Zhao.,...&H. P. Xu.(1996).Growth characteristics of mercuric iodide single crystal.Crystal Research and Technology,31(8),979-983.
MLA	Z. H. Li,et al."Growth characteristics of mercuric iodide single crystal".Crystal Research and Technology 31.8(1996):979-983.