Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder | |
G. G. Qin; J. Lin; J. Q. Duan; G. Q. Yao | |
1996 | |
发表期刊 | Applied Physics Letters
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ISSN | 0003-6951 |
卷号 | 69期号:12页码:1689-1691 |
摘要 | Ultraviolet (UV) light emission with almost the same peak wavelengths from thermally oxidized porous silicon (OPS) (340, 355, and 370 nm) and SiO2 powder (340, 350, and 370 nm) has been observed. Photoluminescence excitation spectra of OPS without Si nanoscale particles (SNP) and those of SiO2 powder are very similar, however, very different from those of the OPS with SNP. Three types of luminescence centers with luminescence wavelengths around 350 nm are responsible for UV light emission, and photoexcitation in OPS with SNP occurs in SNP-as well as in Si oxide layers covering SNP. (C) 1996 American Institute of Physics. |
部门归属 | acad sinica,int ctr mat phys,shenyang 110015,peoples r china. beijing univ,dept chem,beijing 100871,peoples r china.;qin, gg (reprint author), beijing univ,dept phys,beijing 100871,peoples r china |
关键词 | Light-emission Visible Luminescence Optical-properties Photoluminescence Excitation Mechanism Centers Films |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/38378 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | G. G. Qin,J. Lin,J. Q. Duan,et al. Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder[J]. Applied Physics Letters,1996,69(12):1689-1691. |
APA | G. G. Qin,J. Lin,J. Q. Duan,&G. Q. Yao.(1996).Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder.Applied Physics Letters,69(12),1689-1691. |
MLA | G. G. Qin,et al."Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder".Applied Physics Letters 69.12(1996):1689-1691. |
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