Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon

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	Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon
	G. G. Qin; H. Z. Song; B. R. Zhang; J. Lin; J. Q. Duan; G. Q. Yao
	1996
发表期刊	Physical Review B
ISSN	1098-0121
卷号	54 期号:4 页码:2548-2555
摘要	A systematic study of the dependence of photoluminescence from porous silicon (PS) on oxidation extent and measurement temperature is given. Oxidation of PS samples at room temperature up to 200 degrees C results in photoluminescence spectra with maxima centered around 1.7 eV. The photoluminescence maxima shift with temperature 10-300 K always toward the 2.7-eV position. These results conflict with predictions of the quantum confinement model for PS luminescence, but can be explained by assuming that several types of luminescence center outside nanoscale Si units in PS are responsible for the luminescence, and that their relative contributions to luminescence change with oxidation extent and measurement temperature. The luminescence centers with luminescence wavelength around 700 nm in SiOx layers, covering the nanoscale silicon particles or on the interfaces of nanoscale Si/SiOx in PS, dominate after sufficient oxidation and their luminescence depends on measurement temperature to a lesser extent than other types of luminescence center do.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china. beijing univ,dept chem,beijing 100871,peoples r china.;qin, gg (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Blue-light Emission Visible Luminescence Photoluminescence Si Temperature Evolution Mechanism Oxidation Stability Exciton
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38379
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. G. Qin,H. Z. Song,B. R. Zhang,et al. Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon[J]. Physical Review B,1996,54(4):2548-2555.
APA	G. G. Qin,H. Z. Song,B. R. Zhang,J. Lin,J. Q. Duan,&G. Q. Yao.(1996).Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon.Physical Review B,54(4),2548-2555.
MLA	G. G. Qin,et al."Experimental evidence for luminescence from silicon oxide layers in oxidized porous silicon".Physical Review B 54.4(1996):2548-2555.