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Initial phase formation in Nb/Si multilayers deposited at different temperatures
M. Zhang; W. Yu; W. H. Wang; W. K. Wang
1996
发表期刊Journal of Applied Physics
ISSN0021-8979
卷号80期号:3页码:1422-1427
摘要The initial phase formation in Nb/Si multilayers deposited at 25 and 200 degrees C was studied by high-resolution transmission electron microscopy and x-ray diffraction. When Nb/Si multilayers were deposited at 25 degrees C, the multilayers with a modulation period L of 4 nm were in the amorphous state, with Nb-rich amorphous silicide layers and Si-rich amorphous silicide layers. The multilayers with a modulation period L of 100 nm also had an amorphous structure, consisting of intermixed layers of amorphous Nb silicide between the amorphous Si (a-Si) and amorphous Nb (a-Nb) layers. The initial amorphization reaction in Nb/Si multilayers is thermodynamically and kinetically favored. When the multilayers were deposited at 200 degrees C, a crystalline cubic Nb3Si phase with AuCu3 structure was formed in the multilayer samples. The interfacial energy and modified heat of formation are used to explain why the crystalline phase is formed and Nb3Si is the first phase formed during deposition at so low a temperature. (C) 1996 American Institute of Physics.
部门归属acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;zhang, m (reprint author), acad sinica,inst phys,beijing 100080,peoples r china
关键词Titanium Thin-films Interfacial Reactions Growth-kinetics Silicon Nucleation (111)Si Systems Si Interdiffusion Selection
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/38483
专题中国科学院金属研究所
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M. Zhang,W. Yu,W. H. Wang,et al. Initial phase formation in Nb/Si multilayers deposited at different temperatures[J]. Journal of Applied Physics,1996,80(3):1422-1427.
APA M. Zhang,W. Yu,W. H. Wang,&W. K. Wang.(1996).Initial phase formation in Nb/Si multilayers deposited at different temperatures.Journal of Applied Physics,80(3),1422-1427.
MLA M. Zhang,et al."Initial phase formation in Nb/Si multilayers deposited at different temperatures".Journal of Applied Physics 80.3(1996):1422-1427.
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