Cerium(IV) oxide films were deposited electrochemically on 430 stainless steel and (100)-oriented highly doped degenerate p-type single-crystal silicon in aqueous solution by the electrogeneration of base method. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results demonstrated that the as-deposited material was faceted cerium oxide with the fluorite structure. Grain size of the film was found to increase from 6 to 16 nm when the bath temperature varied from 26 to 80 degrees C, but to decrease from 18 to 6 nm when the applied current density increased from 0.5 to 3.0 mA cm(-2). The films were observed to have no preferred orientation.
部门归属
univ missouri,grad ctr mat res,rolla,mo 65401.;zhou, yc (reprint author), acad sinica,inst met res,72 wenhua rd,shenyang 110015,peoples r china
Y. C. Zhou,J. A. Switzer. Growth of cerium(IV) oxide films by the electrochemical generation of base method[J]. Journal of Alloys and Compounds,1996,237(1-2):40913.
APA
Y. C. Zhou,&J. A. Switzer.(1996).Growth of cerium(IV) oxide films by the electrochemical generation of base method.Journal of Alloys and Compounds,237(1-2),40913.
MLA
Y. C. Zhou,et al."Growth of cerium(IV) oxide films by the electrochemical generation of base method".Journal of Alloys and Compounds 237.1-2(1996):40913.
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