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Infrared magneto-optical absorption of shallow donors in GaAs/GaAsAl quantum dots
K. D. Zhu; S. W. Gu
1996
发表期刊Communications in Theoretical Physics
ISSN0253-6102
卷号25期号:2页码:145-148
摘要Infrared magneto-optical absorption spectra of shallow donor impurity states in GaAs/GaAsAl quantum dot are investigated theoretically using the effective-mass approximation within the strong confinement regime. The numerical results show that for high magnetic fields, the transition energies for (0, 0) --> (0, 1) increase linearly with enhancement of magnetic field strength, while the transition energies for (0, 0) --> (0, -1) appear to diminish with increasing magnetic field strength.
部门归属shanghai jiao tong univ,inst condensed matter phys,shanghai 200030,peoples r china. shanghai jiao tong univ,dept appl phys,shanghai 200030,peoples r china.;zhu, kd (reprint author), int ctr mat phys,shenyang 110015,peoples r china
关键词Level-crossings States Electron Excitons Fields Gaas
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/38516
专题中国科学院金属研究所
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K. D. Zhu,S. W. Gu. Infrared magneto-optical absorption of shallow donors in GaAs/GaAsAl quantum dots[J]. Communications in Theoretical Physics,1996,25(2):145-148.
APA K. D. Zhu,&S. W. Gu.(1996).Infrared magneto-optical absorption of shallow donors in GaAs/GaAsAl quantum dots.Communications in Theoretical Physics,25(2),145-148.
MLA K. D. Zhu,et al."Infrared magneto-optical absorption of shallow donors in GaAs/GaAsAl quantum dots".Communications in Theoretical Physics 25.2(1996):145-148.
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