EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER

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	EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER
	W. X. Chen; M. H. Yuan; K. Wu; Y. X. Zhang; Z. M. Wang; G. G. Qin
	1995
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	78 期号:1 页码:584-586
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;chen, wx (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Electrical-properties Indium-phosphide Contacts Gaas Si
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38536
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. X. Chen,M. H. Yuan,K. Wu,et al. EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER[J]. Journal of Applied Physics,1995,78(1):584-586.
APA	W. X. Chen,M. H. Yuan,K. Wu,Y. X. Zhang,Z. M. Wang,&G. G. Qin.(1995).EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER.Journal of Applied Physics,78(1),584-586.
MLA	W. X. Chen,et al."EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER".Journal of Applied Physics 78.1(1995):584-586.